KSC2258A

KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier High BVCEO 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSC2258 : KSC2258A VCEO Collector-Emitter Voltage : KSC2258 : KSC2258A VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 250 300 6 100 150 4 150 - 55 ~ 150 V V V mA mA W °C °C 250 300 V V Value Units Electrical Characteristics TC=25°C unless otherwise noted Symbol BVEBO ICER hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IE = 0.1mA, IC = 0 VCE = 250V, RBE = 100KΩ VCE = 20V, IC = 40mA VCE = 50V, IC = 5mA IC = 50mA, IB = 5mA VCE = -20V, IC = 40mA VCE = 10V, IC = 10mA VCB = 50V, f = 1MHz 100 3 4.5 40 30 1.2 1.2 V V MHz pF Min. 6 Typ. Max. 100 Units V µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2258/2258A Typical Characteristics 100 1000 IB=2.0mA IC[mA], COLLECTOR CURRENT 80 hFE, DC CURRENT GAIN IB =1.8mA IB=1.6mA IB =1.4mA IB =1.2mA IB=1.0mA IB=0.8mA IB =0.6mA IB =0.4mA VCE = 10V 100 60 40 10 IB=0.2mA 20 0 0 2 4 6 8 10 1 0.1 1 10 100 VCE [V], COLLEC...