KSC2233
KSC2233
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : VCBO = 200V • Collector Current (DC) : I...
KSC2233
KSC2233
B/W TV Horizontal Deflection Output
Collector-Base
Voltage : VCBO = 200V Collector Current (DC) : IC = 4A Collector Dissipation : PC = 40W
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 60 5 4 40 150 -55 ~ +150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Current Gain Bandwidth Product Test Condition IC = 1mA, IE = 0 IC = 20mA, IB =0 IE = 1mA, IC = 0 VCB = 170V, IE = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A 10 30 20 40 1 1.5 V V MHz Min. 200 60 5 10 150 Typ. Max. Units V V V µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2233
Typical Characteristics
5
VCE = 5V
IC[A], COLLECTOR CURRENT
4
3
IB = 30 mA IB = 25 mA
2
IB = 20 mA IB = 15 mA
hFE, DC CURRENT GAIN
IB = 50 mA IB = 45 mA IB = 40 mA IB = 35 mA
1000
100
1
IB = 10 mA IB = 5 mA
0 0 4 8 12 16 20
10 ...