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KSB810 Datasheet

Part Number KSB810
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Audio Frequency Amplifier
Datasheet KSB810 DatasheetKSB810 Datasheet (PDF)

KSB810 KSB810 Audio Frequency Amplifier • Complement to KSD1020 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5.0 -700 -1.0 350 150 -55 ~ 150 Units V V V m.

  KSB810   KSB810






Part Number KSB817
Manufacturers ETC
Logo ETC
Description PNP Transistor
Datasheet KSB810 DatasheetKSB817 Datasheet (PDF)

PNP Transistor KSB817 datasheet www.semicon-data.de Free Datasheet http://www.nDatasheet.com PNP Transistor KSB817 datasheet www.semicon-data.de Free Datasheet http://www.nDatasheet.com PNP Transistor KSB817 datasheet www.semicon-data.de Free Datasheet http://www.nDatasheet.com .

  KSB810   KSB810







Part Number KSB817
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Planar Silicon Transistor
Datasheet KSB810 DatasheetKSB817 Datasheet (PDF)

KSB817 KSB817 Audio Power Amplifier Car Booster Output Amplifier DC to DC Converter • High Current Capability • High Power Dissipation • Complementary to KSD1047 1 TO-3P 1.Base 2.Collector 3.Emitter PNP Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction .

  KSB810   KSB810







Part Number KSB811
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet KSB810 DatasheetKSB811 Datasheet (PDF)

KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -1..

  KSB810   KSB810







Part Number KSB811
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description PNP Transistor
Datasheet KSB810 DatasheetKSB811 Datasheet (PDF)

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  KSB810   KSB810







Audio Frequency Amplifier

KSB810 KSB810 Audio Frequency Amplifier • Complement to KSD1020 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5.0 -700 -1.0 350 150 -55 ~ 150 Units V V V mA A mW °C °C * PW≤10ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Base-Emitter on Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA VCE= -6V, IC= -10mA IC= -700mA, IB= -70mA IC= -700mA, IB= -70mA VCB= -6V, IE=0, f=1MHz VCE= -6V, IC=-10mA 50 70 35 -600 200 100 -640 -0.25 -0.95 17 160 Min. Typ. Max. -100 -100 400 -700 -0.4 -1.2 40 mV V V pF MHz Units nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB810 Typical Characteristics -50 1000 IB = -250µ A VCE= -1V IC[mA], COLLECTOR CURRENT -40 -30 IB = -150µ A h.


2005-04-05 : D8237A    D8237A    K9K1G08U0B    KS88C0916    KS88C2064    KS88C2148    KS88C2416    KS88C2432    KS88C4404    KS88C4504   


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