KSB1097

KSB1097 KSB1097 Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 80 - 60 -7 -7 - 15 - 3.5 2 30 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Min. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1097 Typical Characteristics -1.0 -0.9 1000 IB = -20mA IB = -18mA VCE = -1V IC [A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 -0 -5 -10 -15 IB = -14mA IB = -12mA IB = -10mA IB = -8mA ...