KSA1304

KSA1304 KSA1304 Vertical Output Applications Power Amplifier Applications Complement to KSC3296 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Ratings - 150 - 150 -5 - 1.5 - 0.5 20 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE VCE(sat) VBE(on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = - 120V, IE = 0 VEB = - 5V, IC = 0 VCE = - 10V, IC = - 500mA IC= - 500mA, IB = - 50mA VCE = - 10V, IC = - 500mA VCE = - 10V, IC = - 500mA VCB = - 10V, f = 1MHz - 0.65 - 0.75 4 55 40 75 Min. Typ. Max. - 10 - 10 140 - 1.5 - 0.85 V V MHz pF Units µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1304 Typical Characteristics -2.0 -2.0 50 m A A IB = -150mA 00 m -1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT -1 = -1.6 IB = -30mA -1.2 IB IB = -100mA IB = -50mA IB = -40mA = -5 0m A -1.6 IB = -40mA IB = -30mA IB = IB = -20mA IB = -15mA -1.2 IB IB = -20mA IB = -15mA -0.8 IB = -10mA IB = -5mA -0...