KP8N60F

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for active power factor correction and switching mode Power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 37.9 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.3 62.5 UNIT ℃/W ℃/W KP8N60F isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=4A IGSS Gate-Source Leakage Current VGS=± 30V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IS =8A, VGS = 0 V KP8N60F MIN TYP MAX UNIT 600 V 2 4 V 0.58 Ω ±100 nA 10 μA 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein t...