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KN2907S Datasheet

Part Number KN2907S
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KN2907S DatasheetKN2907S Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Po.

  KN2907S   KN2907S






Part Number KN2907AS
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KN2907S DatasheetKN2907AS Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Po.

  KN2907S   KN2907S







Part Number KN2907A
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KN2907S DatasheetKN2907A Datasheet (PDF)

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  KN2907S   KN2907S







Part Number KN2907
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KN2907S DatasheetKN2907 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KN2907/A EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. ᴌComplementary to the KN2222/2222A. K D E G N A ᴌLow Leakage Current H MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature.

  KN2907S   KN2907S







EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25 ) PC PC * 150 mW 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Type Name ZDA Lot No. ZHAType Name Lot No. MARK SPEC TYPE KN2907S KN2907AS MARK ZDA ZHA 2002. 6. 25 Revision No : 3 1/3 KN2907S/AS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICEX Collector Cut-off Current KN2907S KN2907AS ICBO Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter * Breakdown Voltage KN2907S KN2907AS V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO KN2907S KN2907AS hFE(1) KN2907S KN2907AS hFE(2) DC.


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