SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit.
FEATURES VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(ON)=30m (Max.) @ VGS=-10V RDS(ON)=37m (Max.) @ VGS=-4.5V Super...
