SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching t...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications.
FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source
Voltage
VDSS
30
Gate Source
Voltage
Drain Current
DC Pulsed
Drain Source Diode Forward Current
VGSS ID * IDP IS
20 6 30 1.7
Drain Power Dissipation
25
PD * 2
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -50~150
Thermal Resistance, Junction to Ambient
RthJA*
62.5
Note> *Surface Mounted on FR4 Board, t 10sec.
UNIT V V A A A W
/W
KMB6D0DN30QB
Dual N-Ch Trench
MOSFET
DP
H T
G
U
L
A
DIM MILLIMETERS
A 4.85+_ 0.2
85
B1 3.94+_ 0.2 B2 6.02+_ 0.3
B1 B2
D 0.4+_ 0.1 G 0.15+0.1/-0.05
14
H 1.63+_ 0.2 L 0.65+_ 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
FLP-8
KMB6D0DN 30QB
PIN CONNECTION (TOP VIEW)
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
1 2 3
4
8
7 6 5
2011. 8. 30
Revision No : 0
1/5
KMB6D0DN30QB
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC Static
SYMBOL
TEST CONDITION
Drain-Source Breakdown
Voltage Drain Cut-off Current Gate Leakage Current Gate Thre...