KMA2D4P20SA

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for use as a load switch in battery powered applications. KMA2D4P20SA P-Ch Trench MOSFET FEATURES VDSS=-20V, ID=-2.4A. Drain to Source on-state Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. : RDS(ON)=175m (Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS 12 V Drain Current DC@Ta=25 (Note1) ID -2.4 A Pulsed (Note1) IDP -9 Ta=25 Drain Power Dissipation Ta=100 (Note1) (Note1) 1.25 PD W 0.6 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note1) RthJA Note1)Surface Mounted on 1 1 FR4 Board, t 5sec. 100 /W E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M SOT-23 Marking KB2Type Name Lot No. PIN CONNECTION (TOP VIEW) D 3 3 21 GS 21 2011. 12. 22 Revision No : 3 1/4 KMA2D4P20SA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static Drain to Source Breakdown Voltage SYMBOL BVDSS Drain Cut-off Current IDSS Gate to Source Leakage Current Gate to Source Threshold Voltage IGSS Vth Drain to SourceSource On Resistance RDS(ON) On State Drain Current ID(ON) Forward Transconductance Dynamic gfs Input Capacitance Output Capaci...