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KM736V789 Datasheet

Part Number KM736V789
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Datasheet KM736V789 DatasheetKM736V789 Datasheet (PDF)

KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change February. 12. 1998 Input/output leackage currant for ±1µA to ±2µA Modify Rea.

  KM736V789   KM736V789






Part Number KM736V787
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Datasheet KM736V789 DatasheetKM736V787 Datasheet (PDF)

KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value from 10mA to 20mA. Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V Change ISB2 value .

  KM736V789   KM736V789







128Kx36 Synchronous SRAM

KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change February. 12. 1998 Input/output leackage currant for ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1 - L ver.& ISB2 - L ver . Remove Low power version. Add 119BGA(7x17 Ball Grid Array Package) Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V March. 11 . 1998 0.4 Preliminary 0.5 April. 14. 1998 Preliminary 0.6 May.13. 1998 Change ISB2 value from 20mA to 30mA. Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Final spec Release Add VDDQ Supply voltage( 2.5V ) Remove 119BGA(7x17 Ball Grid Array Package) . May.14.1998 Preliminary 0.7 Preliminary 1.0 2.0 3.0 May. 15. 1998 Dec. 02. 1998 Nov. 26. 1999 Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the.


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