KM681000E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
...
KM681000E Family
Document Title
128Kx8 bit Low Power
CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction
Draft Data
October 12, 1998 August 30, 1999
Remark
Preliminary Final
www.DataSheet4U.com
1.01
December 1, 1999
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.01 December 1999
KM681000E Family
128Kx8 bit Low Power
CMOS Static RAM
FEATURES
Process Technology: TFT Organization: 128Kx8 Power Supply
Voltage: 4.5~5.5V Low Data Retention
Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The KM681000E families are fabricated by SAMSUNG′s advanced
CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention
voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family www.DataSheet4U.com KM681000EL KM681000EL-L KM681000ELI KM681000ELI-L
1. The parameters are tested with 50pF test load
Op...