KM62U256D

www.DataSheet4U.com KM62V256D, KM62U256D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 November 1997 KM62V256D, KM62U256D Family 32Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology : TFT Organization : 32Kx8 Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : 28-SOP-450 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESCRIPTION The KM62V256D and KM62U256D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have various package types...