KM48C8004B, KM48C8104B
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,3...
KM48C8004B, KM48C8104B
CMOS DRAM
8M x 8bit
CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode
CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced
CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
Part Identification - KM48C8004B(5.0V, 8K Ref.) - KM48C8104B(5.0V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 Refresh Cycles Part NO. KM48C8004B* KM48C8104B 8K 550 495 440 Refresh cycle 8K 4K 4K 715 660 605 Refresh time Normal 64ms
RAS CAS W
Extended Data Out Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages +5.0V±10% power supply
FUNCTIONAL BLOCK DIAGRAM
Control Clocks Vcc Vss
VBB Generator
Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode :...