KM44V4100C

KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer. FEATURES Part Identification - KM44C4000C/C-L (5V, 4K Ref.) - KM44C4100C/C-L (5V, 2K Ref.) - KM44V4000C/C-L (3.3V, 4K Ref.) - KM44V4100C/C-L (3.3V, 2K Ref.) Active Power Dissipation Unit : mW Speed 4K -5 -6 324 288 3.3V 2K 396 360 4K 495 440 5V 2K 605 550 Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packag...