KM416V4100B

KM416V4000B, KM416V4100B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - KM416V4000B/B-L(3.3V, 8K Ref.) - KM416V4100B/B-L(3.3V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 Refresh Cycles Part NO. KM416V4000B* KM416V4100B Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS UCAS LCAS W Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) packages +3.3V±0.3V power supply 4K 468 432 396 8K 360 324 288 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps ...