KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary CMOS SDRAM
Re...
KM416S4030C
Revision History
Revision 1 (May 1998)
- ICC2 N value (10mA) is changed to 12mA.
Preliminary
CMOS SDRAM
Revision .2 (June 1998)
- tSH (-10 binning) is revised.
REV. 2 June '98
KM416S4030C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
Preliminary
CMOS SDRAM
GENERAL DESCRIPTION
The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ′s high performance
CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part No. KM416S4030CT-G/F7 KM416S4030CT-G/F8 KM416S4030CT-G/FH KM416S4030CT-G/FL KM416S4030CT-G/F10 Max Freq. 143MHz 125MHz 100MHz 100MHz 100MHz LVTTL 54 TSOP(II) Interface Package
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register...