KM416C4000C, KM416C4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,1...
KM416C4000C, KM416C4100C
CMOS DRAM
4M x 16bit
CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode
CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced
CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
Part Identification - KM416C4000C(5.0V, 8K Ref.) - KM416C4100C(5.0V, 4K Ref.) Active Power Dissipation Unit : mW Speed -5 -6 8K 495 440 4K 660 605
Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) package +5.0V±10% power supply
Refresh Cycles Part NO. KM416C4000C* KM416C4100C Refresh cycle 8K 4K Refresh time Normal 64ms
RAS UCAS LCAS W Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
* Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode : 4K...