KM416C254D

KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. Extended Data Out Mode operation FEATURES Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.) 2 CAS Byte/Wrod Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in 40-pin SOJ 400mil and 44(40)-pin packages Triple +5V±10% power supply (5V product) Triple +3.3V±0.3V power supply (3.3V product) Active Power Dissipation Speed -5 -6 -7 Refresh Cycles Part NO. C254D V254D VCC ...