KM23V4000D(E)TY/KM23S4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Fast access time...
KM23V4000D(E)TY/KM23S4000D(E)TY
4M-Bit (512Kx8)
CMOS MASK ROM
FEATURES
524,288 x 8 bit organization Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) Supply
voltage KM23V4000D(E)TY : single +3.0V/ single +3.3V KM23S4000D(E)TY : single +2.5V Current consumption Operating : 25mA(Max.) Standby : 30 µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. KM23V(S)4000D(E)TY : 32-TSOP1-0820
CMOS MASK ROM
GENERAL DESCRIPTION
The KM23V4000D(E)TY and KM23S4000D(E)TY are fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate
CMOS process technoiogy. This device operates with low power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V4000D(E)TY and KM23S4000D(E)TY are packaged in a 32-TSOP1.
FUNCTIONAL BLOCK DIAGRAM
A18 X BUFFERS AND DECODER MEMORY CELL MATRIX (524,288x8)
PRODUCT INFORMATION
Product Operating Temp Range 0°C~70°C -20°C~85°C
. . . . . . . .
A0
Y BUFFERS AND DECODER
SENSE AMP. BUFFERS
CE OE
CONTROL LOGIC
Pin Name A0 - A18 Q0 - Q7 CE OE VCC VSS N.C
w
w
w
.D
t a
. . .
S a
Q7
e h
A11 A9 A8 A13 A14 A17 N.C VCC A18 A16 #1
KM23V4000DTY
KM23S4000DTY
t e
U 4
.c
m o
2.5V
Vcc Range (Typical)...