KM23V32000D(E)TY/KM23S32000D(E)TY
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 4,194,304x8(byt...
KM23V32000D(E)TY/KM23S32000D(E)TY
32M-Bit (4Mx8 /2Mx16)
CMOS MASK ROM
FEATURES
Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) Supply
voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. KM23V(S)32000D(E)TY : 48-TSOP1-1218
CMOS MASK ROM
GENERAL DESCRIPTION
The KM23V32000D(E)TY and KM23S32000D(E)TY are fully static mask programmable ROM fabricated using silicon gate
CMOS process technology, and is organized either as 4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE
voltage level.(See mode selection table) This device operates with low power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V32000D(E)TY and KM23S32000D(E)TY are packaged in a 48-TSOP1.
FUNCTIONAL BLOCK DIAGRAM
A20 . . . . . . . . A0 A-1
X BUFFERS AND DECODER
MEMORY CELL MATRIX (2,097,152x16/ 4,194,304x8)
Y BUFFERS AND DECODER
CE OE BHE
CONTROL LOGIC
w
w
w
.D
SENSE AMP. DATA OUT
t a
. . .
S a
e h
t e
U 4
.c
m o
Pin Name A0 - A20
...