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KM23C4000D

Samsung semiconductor

4M-Bit (512Kx8) CMOS MASK ROM

KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply vo...


Samsung semiconductor

KM23C4000D

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Description
KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES 524,288x8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. KM23C4000D : 32-DIP-600 -. KM23C4000DG : 32-SOP-525 CMOS MASK ROM GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23C4000D is packaged in a 32-DIP and the KM23C4000DG in a 32-SOP. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION A18 . . . . . . . . A0 X BUFFERS AND DECODER Y BUFFERS AND DECODER CE CONTROL OE LOGIC MEMORY CELL MATRIX (524,288x8) SENSE AMP. BUFFERS ... Q0 Q7 Pin Name A0 - A18 Q0 - Q7 CE OE VCC VSS N.C Pin Function Address Inputs Data Outputs Chip Enable Output Enable Power(+5V) Ground No Connection N.C 1 A16 2 A15 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 Q0 13 Q1 14 Q2 15 VSS 16 DIP & SOP 32 VCC 31 A18 30 A17 29 A14 28 A13 27 A8 26 A9 25 A11 24 OE 23 A10 21 CE 21 Q7 20 Q6 19 Q5 18 Q4 17 Q3 KM23C4000D(G) KM23C4000D(G) CMOS MASK...




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