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Light Emitting Diode(GaN)
KLM-821G
KLM-821G has a 1W High power GaN green LED and has the optimize...
www.DataSheet4U.net
Light Emitting Diode(GaN)
KLM-821G
KLM-821G has a 1W High power GaN green LED and has the optimized optical characteristics. DIMENSIONS
Reference
Features
Low forward
voltage operated More Energy Efficient than incandescent and most halogen lampes
Applications
Portable flashlight Bollards,Security,Garden lighting LCD Back light General lighting
Maximum Ratings Parameter Reverse
Voltage Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature
*2. Soldering time £ 5 Sec
*2 *1
[ Ta=25°C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 350 1000 1000 -30 ~ + 110 -40 ~ +120 260
Unit V mA mA mW °C °C °C
*1. IFP Measured under duty £ 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward
voltage Flux Doninant Wave Length Spectral half bandwidth Half angle Symbol VF Im λd ∆λ ∆Θ Conditions IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA Min 520 Typ 2.5 60 20 90 Max 530 -
[ Ta=25°C ]
Unit V lm nm nm deg.
1/2
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Light Emitting Diode(GaN)
KLM-821G
Forward current vs. Ambient temperature
(IF) 500
Radiant Intensity vs. Forward current
1.5
Forward current IF(mA)
400
Relative intensity
1
300
Rth(J-A)=60℃/W Rth(J-A)=50 ℃/W
200 100 0
Rth(J-A)=40 ℃/W Rth(J-A)=30℃/W
0.5
0
25
50
75
100
(℃) 125
0
0
(IF) 100 200 300 350 400 450 500
Ambient temperature Ta
Forward current IF
Relative radiant intensity vs. Ambient temperature
Relativ...