KIA
SEMICONDUCTORS
13Amps,500V N-CHANNEL MOSFET
13N50H
1.Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology
2. Features
RDS(on)=0.48Ω @ VGS=10V Low gate charge ( typical 43nC) Fast switching capability Avalanche energy specified Improved dv/dt capa.
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
13Amps,500V N-CHANNEL MOSFET
13N50H
1.Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology
2. Features
RDS(on)=0.48Ω @ VGS=10V Low gate charge ( typical 43nC) Fast switching capability Avalanche energy specified Improved dv/dt capability
3. Pin configuration
Pin 1 2 3 4
1 of 5
Function Gate Drain Source Drain
KIA
SEMICONDUCTORS
13Amps,500V N-CHANNEL MOSFET
13N50H
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current continuous Drain current pulsed (note1)
TC=25ºC TC=100ºC
Avalanche energy
Repetitive (note1) Single pulse (note2)
Peak diode recovery dv/dt (note 3)
VDSS VGSS
ID
IDP EAR EAS dv/dt
Total power dissipation
TC=25ºC derate above 25ºC
PD
Junction temperature
TJ
Storage temperature
TSTG
Drain current limited by maximum junction temperature.
(TC= 25 ºC , unless otherwise notes)
Ratings
Units
500 V
+30 V
13.0 A
8.0 A
52.0 A
19.5 mJ
860 mJ
4.5 V/ns
195 W
1.65 W/ºC
+150
ºC
-55~+150
ºC
5. Thermal characteristics
Parameter Thermal resistance,junction-ambient Thermal resistance,case-to-sink typ. Thermal resistance,Junction-case
Symbol RthJA RthCS RthJC
Ratings 62.5 0.5 0.64
Units ºC/W
2 of 5
KIA
SEMICONDUCTORS
13Amps,500.