KHB6D0N40P

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q I FEATURES VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KHB6D0N40P KHB6D0N40F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 73 0.74 150 -55 150 6.0 3.6 24 450 9.2 4.5 38 0.3 400 30 6.0* 3.6* 24* mJ mJ P E G 1. GATE 2. DRAIN 3. SOURCE UNIT V V TO-220AB A A F O B C V/ns K W W/ L J D M M H Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient DIM MILLIMETERS _ 0.2 10.16 + ...