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KF4N60D Datasheet

Part Number KF4N60D
Manufacturers KEC
Logo KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF4N60D DatasheetKF4N60D Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain.

  KF4N60D   KF4N60D






Part Number KF4N60I
Manufacturers KEC
Logo KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF4N60D DatasheetKF4N60I Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain.

  KF4N60D   KF4N60D







Part Number KF4N60F
Manufacturers KEC
Logo KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF4N60D DatasheetKF4N60F Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF4N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Vol.

  KF4N60D   KF4N60D







N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 3.2 2.0 12* 130 3.3 4.5 59.5 0.48 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj 150 Tstg -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.1 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D KF4N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF4N60I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DIM.


2016-03-23 : AON7202    D2493    23HY0001N    23HY0002N    23HY1001N    23HY1002N    23HY2001N    23HY2002N    23HY0001-01N    23HY0002-01N   


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