KF4N20LI

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V H G F F KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF4N20LD A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.50 + 0.10 L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 200 20 3.6 2.2 7* A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE DPAK (1) co m 52 3 5.5 — écˆ gC N ãt mJ h. -s mJ KF4N20LI A C H J kb w 31 w N m w O w .c V/ns W B D DIM A B MILLIMETERS 0.25 150 -55 150 W/ K M N _ 0.2 6.6 + _ 0.2 6.1 + _ 0.3 5.34 + _ 0.2 0.7 + _ 0.3 9.3 + _ 0.2 2.3 + _ 0.1 0.76 + _ 0.1 2.3 + _ 0.1 0.5 + _ 0.2 1.8 + _ 0.1 0.5 + _ 0.1 1.0 + 0.96 MAX _ 0.3 1.02 + Maximum Junction Temperature Storage Tempe...