DatasheetsPDF.com

KF3N50FZ Datasheet

Part Number KF3N50FZ
Manufacturers KEC
Logo KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF3N50FZ DatasheetKF3N50FZ Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF3N50FZ/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50.

  KF3N50FZ   KF3N50FZ






Part Number KF3N50FS
Manufacturers KEC
Logo KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF3N50FZ DatasheetKF3N50FS Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF3N50FZ/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50.

  KF3N50FZ   KF3N50FZ







N-CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KF3N50FZ/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50FS) trr(typ) = 300ns (KF3N50FZ) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain Current limited by maximum junction temperature PIN CONNECTION (KF3N50FZ/FS) D RATING 500 30 3* 1.8* 9* 110 4 10 25 0.2 150 -55 150 5.0 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 .


2016-03-01 : GBU8005-G    GBU801-G    GBU802-G    GBU804-G    GBU806-G    GBU808-G    GBU810-G    KBPC50005    KBPC50005W    KBPC5001W   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)