SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast sw...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies.
FEATURES VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source
Voltage Gate-Source
Voltage
VDSS VGSS
200 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TC=25 Derate above25
ID IDP EAS EAR dv/dt
PD
15 9.4 45* 215
4.9
4.5 83.3 0.67
Maximum Junction Temperature
Tj
150
Storage Temperature Range Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance, Junction-toAmbient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
KF19N20D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF19N20D
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
KF19N20I
AH CJ
BD
M N
G FF
123
K
E
P
L
1. GATE 2. DRAIN 3. SOURCE
DIM A B C...