SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast sw...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF11N50P KF11N50F
Drain-Source
Voltage
VDSS
500
Gate-Source
Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
11 11* 7 7* 33 33*
400
6.6
4.5
Drain Power Dissipation
Tc=25 Derate above 25
PD
178 1.43
46.3 0.37
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
0.7 62.5
2.7 62.5
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
www.ckb-sh.com
K
Q
KF11N50P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF11N50P
A
E
I K
M
D NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7
0.5+0.1/-0.05 1.5
13.08+_ 0.3
1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0...
