SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package.
MAXIMUM RATING (Ta=25 ...
SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse
Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
KDV350
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse
Voltage
VR
Reverse Current
IR
Capacitance
C1V C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION IR=1 A VR=15V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz
MIN. 15 15.0 5.3 2.8 -
TYP. -
MAX. 10
17.5 6.3 0.5
UNIT V nA
pF
Marking
Type Name
UK
Lot No.
2008. 9. 11
Revision No : 2
1/2
REVERSE CURRENT I R (A)
KDV350
-11
10
IR - VR
-12
10
-13
10 0
4 8 12 REVERSE
VOLTAGE VR (V)
16
CAPACITANCE C (pF)
CR - V
25 f=1MHz
20
15
10
5
0
-1
10
1.0 REVERSE
VOLTAGE VR (V)
10
r s - VR
0.4 f=1MHz
0.3
0.2
0.1
0 0.5
1.0
3.0 5.0 10
30 50
REVERSE
VOLTAGE VR (V)
SERIES RESISTANCE r s (Ω)
2008 .9. 11
Revision No : 2
2/2
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