SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=11.0(Min.) Low Series Resistance : ...
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=11.0(Min.) Low Series Resistance : rS=0.75 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse
Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 34 125
-55 125
UNIT V
KDV269E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
GG
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN. 29 2.5
11.0 -
TYP. -
31.5 2.75 11.5
-
MAX. 10 34 2.9 0.75
UNIT nA pF pF -
Marking
Type Name
UR
2014. 3. 31
Revision No : 3
1/2
REVERSE CURRENT IR (A)
KDV269E
-9
10
-10
10
-11
10
-12
10
-13
10 0
IR - VR
10 20 30 REVERSE
VOLTAGE VR (V)
40
TOTAL CAPACITANCE CT (pF)
C T - VR
60 f=1MHz
40
20
0 1 10 50 REVERSE
VOLTAGE VR (V)
0.8 0.6
0.4
0.2 0 1
r s - VR
f=470MHz
10 REVERSE
VOLTAGE VR (V)
50
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ∆(LOG VR) - VR
0
-1
-2
-3 1 10 50 REVERSE
VOLTAGE VR (V)
SERIES RESISTANCE rs (Ω)
...
