KDV215E

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Peak Reverse Voltage VRM Junction Temperature Tj Storage Temperature Range Tstg RATING 30 35(RL=10k ) 125 -55 125 UNIT V V KDV215E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A GG C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC Marking Type Name TA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR Reverse Current IR Capacitance C2V Capacitance C25V Capacitance Ratio C2V/C25V Series Resistance rS Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.) (VR=2~25V) TEST CONDITION VR=30V VR=30V, (Ta=60 ) VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz MIN. - 14.16 2.11 5.90 - TYP. - 6.50 0.4 MAX. 10 100 16.25 2.43 7.15 0.55 UNIT nA nA pF pF - 2014. 3. 31 Revision No : 4 1/2 CAPACITANCE CT (pF) KDV215E C T - VR 100 f=1MHz 50 Ta=25 C 30 10 5 3 1 0 4 8 12 16 20 24 28 REVERSE VOLTAGE VR (V) SERIES RESISTANCE rs (Ω) 0.8 0.6 0.4 0.2 0 1 r s - VR f=470MHz Ta=25 C 35 10 REVERSE VOLTAGE VR (V) 30 3 f=1MHz 2 1 0 C - Ta VR=2V 14 20 25 -1 -2 -40 -20 0 20 40 60 80 AM...