KDV214EA

SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.3(Typ.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Junction Temperature Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V KDV214EA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A GG C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC Marking Type Name UZ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR Capacitance C2V Capacitance C25V Capacitance Ratio C2V/C25V Series Resistance rS Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.) (VR=2~25V) TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz MIN. - 14.15 1.96 6.3 - TYP. - MAX. 10 15.75 2.25 0.57 UNIT nA pF pF - 2014. 3. 31 Revision No : 2 1/2 REVERSE CURRENT IR (A) KDV214EA -10 10 IR - VR -11 10 -12 10 -13 10 0 10 20 30 REVERSE VOLTAGE VR (V) 40 TOTAL CAPACITANCE CT (pF) C T - VR 20 f=1MHz 15 10 5 0 1 10 50 REVERSE VOLTAGE VR (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 r s - VR f=470MHz 10 REVERSE VOLTAGE VR (V) 50 ∆(LOG CT) / ∆(LOG VR) ∆(LOG CT) / ∆(LOG VR) - VR 0 -0.5 -1.0 -1.5 1 10 REVERSE VOLTAGE VR (V) 50 SERIES RESISTANC...