SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Low Forward Voltage : VF=1.0V (Max.). Smal...
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Low Forward
Voltage : VF=1.0V (Max.). Small Package : VSM.
2
KDS221V
SILICON EPITAXIAL PLANAR DIODE
E B
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse
Voltage Reverse
Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW
C
P
P
DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5
A
G
H
K
J
D
3
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1
VSM
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward
Voltage Reverse Current
)
TEST CONDITION IF=10mA VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF IR
SYMBOL
2003. 10. 28 www.DataSheet4U.net
Revision No : 0
1/2
KDS221V
IF
100 FORWARD CURRENT I F (mA)
D1
- VF
100
D1+D2
IF
FORWARD CURRENT I F (mA)
D2
- VF
10
10
25 C Ta=7 5 C
Ta=12 5 C Ta=75 C Ta=25 Ta=-25 C C
Ta= 125 C Ta= 75 C Ta= 25 C Ta=-2 5 C
1
1
0.1
0.1
0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD
VOLTAGE VF (V)
0.01 0 0.4 0.8 1.2 1.6 FORWARD
VOLTAGE VF (V)
I R - VR
100
Ta=125 C D1 D2 D1 D2 D1 D2
C T - VR
10 TOTAL CAPACITANCE CT (pF) 5 3
(D1) (D1+D2) (D2) f=1MHz
REVERSE CURRENT IR (nA)
10
Ta=1...