SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small package : TFSV. Low forward voltage....
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small package : TFSV. Low forward
voltage. Fast reverse recovery time. Small total capacitance.
C
KDS166F
SILICON EPITAXIAL PLANAR DIODE
B B1
MAXIMUM RATING (Ta=25 CHARACTERISTIC
) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V
H
Maximum (Peak) Reverse
Voltage Reverse
Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range * : Unit rating. Total rating=unit rating
DIM A A1 B B1 C D H T
MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 +
A1 C
A
D
V mA mA A mW
T
1. ANODE 1 2. N.C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1
TFSV Marking
5 4
Lot No.
SC
1 2 3
D1
D2
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF ns V UNIT
SYMBOL VF(1)
Forward
Voltage
VF(2) VF(3)
Reverse Current Total Capacitance Reverse Recovery Time
IR CT trr
2006. 1. 13 www.DataSheet4U.net
Revision No : 0
1/2
KDS166F
IF - VF
FORWARD CURRENT IF (mA) REVERSE CURRENT IR (µA)
10 10 10
0 C Ta =2 Ta 5 C =-2 5 C
3
IR - VR
10
Ta=100 C Ta=75 C
2
1
1 10 10
-1
Ta =
10
10
-1
Ta=50 C
-2
10
Ta=25 C
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
20
40
60
80
FORWARD
VOLTAGE VF (V)
REVERSE VOL...