KDR412

SEMICONDUCTOR TECHNICAL DATA KDR412 SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES Small Surface Mounting Type. (USC) Low Forward Voltage : VF max=0.5V High Reliability CONSTRUCTION Silicon epitaxial planar. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range SYMBOL VRM VR IO IFSM Tj Tstg RATING 40 20 0.5 3 125 -40 +125 UNIT V V A A CATHODE MARK E A K F L B 1 2 D MM 1. ANODE 2. CATHODE G H J C I DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6 USC Marking Lot No. Type Name U3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF (1) VF (2) IR Total Capacitance CT TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz MIN. - TYP. 20 MAX. 0.3 0.5 30 - UNIT V V A pF 2014. 3. 31 Revision No : 4 1/2 FORWARD CURRENT IF (A) TTaaT==Ta-2a=25=75152CC5C C KDR412 IF - VF 1 100m 10m 1m 100µ 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE VF (V) CT - VR 1K Ta=25 C f=1MHz 100 10 1 0 10 20 30 REVERSE VOLTAGE VR (V) 40 REVERSE CURRENT IR (A) 10m 1m 100µ IR - VR Ta=125 C Ta=75 C 10µ Ta=25 C 1µ 0 5 10 15 20 25 30 35 REVERSE VOLTAGE VR (V) TOTAL CAPACITANCE CT (pF) 2014. 3. 31 Revision No : 4 2/2 ...