SEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FE...
SEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (USM) Low Forward
Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Peak Reverse
Voltage DC Reverse
Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range
SYMBOL VRM VR IO IFSM Tj Tstg
RATING 40 20 0.5 3 125
-40 +125
UNIT V V A A
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.10
NK
N
N 0.10 MIN P 0.1 MAX
1. NC 2. ANODE 3. CATHODE
3 21
USM
Marking
Lot No.
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward
Voltage
Reverse Current Total Capacitance
VF (1) VF (2)
IR CT
TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz
MIN. -
TYP. 20
MAX. 0.3 0.5 30 -
UNIT V V A pF
2008. 9. 8
Revision No : 4
1/2
KDR411
2008. 9. 8
Revision No : 4
2/2
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