KDR377E

SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.43V (Typ.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 40 Reverse Voltage VR 40 Maximum (Peak) Forward Current IFM 150 Average Forward Current IO 30 Surge Current (10ms) IFSM 200 Power Dissipation PD 150* Junction Temperature Tj 125 Storage Temperature Range Tstg -55 125 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. UNIT V V mA mA mA mW CATHODE MARK B A KDR377E SCHOTTKY BARRIER TYPE DIODE C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Marking Type Name UV ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF(1) VF(2) IR Total Capacitance CT TEST CONDITION IF=1mA IF=30mA VR=40V VR=1V, f=1MHz MIN. - TYP. 0.29 0.43 6.0 MAX. 0.37 0.55 20 - UNIT V A pF 2003. 6. 13 Revision No : 3 1/2 FORWARD CURRENT IF (uA) KDR377E 10 6 Ta=25 C 5 10 4 10 3 10 2 10 I F - VF 10 1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) REVERSE CURRENT IR (nA) 10 3 Ta=25 C I R - VR 10 2 10 0 10 20 30 40 50 60 REVERSE VOLTAGE VR (V) 50 30 10 5 3 1 0 CT - VR Ta=25 C f=1MHz 10 20 30 40 REVERSE VOLTAGE VR (V) TERMINAL CAPACITANCE CT (pF) 2003. 6. 13 Revision No : 3 2/2 ...