SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.43V (Typ.) Small P...
SEMICONDUCTOR
TECHNICAL DATA
LOW
VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward
Voltage : VF(2)=0.43V (Typ.) Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse
Voltage
VRM
40
Reverse
Voltage
VR
40
Maximum (Peak) Forward Current
IFM
150
Average Forward Current
IO
30
Surge Current (10ms)
IFSM
200
Power Dissipation
PD
200*
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA mA mW
CATHODE MARK E A K
F L
KDR377
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2 D
M
M
1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
UV
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward
Voltage Reverse Current
VF(1) VF(2)
IR
Total Capacitance
CT
TEST CONDITION IF=1mA IF=30mA VR=40V VR=1V, f=1MHz
MIN. -
TYP. 0.29 0.43
6.0
MAX. 0.37 0.55 20
-
UNIT V A pF
2003. 6. 13
Revision No : 4
1/2
FORWARD CURRENT IF (uA)
KDR377
6
10 Ta=25 C
5
10
4
10
3
10
2
10
I F - VF
10
1 0
0.2
0.4
0.6
0.8
FORWARD
VOLTAGE VF (V)
REVERSE CURRENT IR (nA)
IR - VR
10 3 Ta=25 C
10 2
10
0
10
20 30
40 50
60
REVERSE
VOLTAGE VR (V)
50 30
10 5 3
1 0
CT - VR
Ta=25 C f=1MHz
10
20
30
40
REVERSE VO...