SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
FEATURES Low Forw...
SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
FEATURES Low Forward
Voltage : VF max=0.55V. Low Leakage Current : IR max=10 A.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Repetitive Peak Reverse
Voltage Reverse
Voltage Average Forward Current Non-repetitive Peak Surge Current Junction Temperature Storage Temperature
SYMBOL VRRM VR IO IFSM Tj Tstg
RATING 50 50 0.1 2 125
-55 125
UNIT V V A A
C N K J
A G H
D
KDR105S
SCHOTTKY BARRIER TYPE DIODE
E
L
B
L
2
3
1
P
P
M
1. NC 2. ANODE 3. CATHODE
DIM A B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20 1.90 0.95
0.13+0.10/-0.05
0.00 ~ 0.10 0.55
0.20 MIN 1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
DL Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse
Voltage
VR
Forward
Voltage
VF
Reverse Current
IR
Total Capacitance
CT
TEST CONDITION IR=50 A IF=0.1A VR=25V VR=10V, f=1MHz
MIN. 50 -
TYP. 7.7
MAX. -
0.55 10 -
UNIT V V A pF
2003. 2. 25
Revision No : 1
1/2
FORWARD CURRENT IF (uA)
KDR105S
10 5 10 4 10 3 10 2
10
1
0.1 0
I F - VF
100 200 300 400 500 600 FORWARD
VOLTAGE VF (mV)
REVERSE CURRENT IR (nA)
IR - VR
10 3
10 2
10 0
10
20
30
40
50
REVERSE
VOLTAGE VR (V)
VR - C
10 2
10
1
0
10
20
30
40
REVERSE
VOLTAGE V R (V)
CAPACITANCE C (pF)
2003. 2. 25
Revision No : 1
2/2
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