KC808-16

SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808(BC808) Features High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector-to-baser breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base emitter on voltage Output Capacitance Transition frequency * Pulsed: PW 3...