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KBL-1KL3

KODENSHI KOREA CORP

Infrared Emitting Diodes

Infrared Emitting Diodes(GaAIAs) KBL-1KL3 1. Description The KBL-1KL3 is a GaAlAs IRED mounted in durable, hermetically...


KODENSHI KOREA CORP

KBL-1KL3

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Description
Infrared Emitting Diodes(GaAIAs) KBL-1KL3 1. Description The KBL-1KL3 is a GaAlAs IRED mounted in durable, hermetically sealea TO-18 metal can type,which provide years of reliable performance, even under demanding conditions such as use outdoors. 2. Features ¡ß Narrow beam angle ¡ß Durable ¡ß High reliability in demanding environments 3. Applications ¡ß Optical encoders ¡ß Fiber optic communications ¨ç ¨è ¨ç ¨è 4. Package Outline Dimensions (Unit: mm) 5. Absolute Maximum Ratings Parameter Reverse Voltage Forward Current Pulse Forward Current (see notes *1) Power Dissipation Operating Temperature Storage Temperature Soldering Temperature (see notes *2) Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 50 0.5 120 -40 ~ +100 -55 ~ +125 260 Unit V §Ì A §Ñ ¡É ¡É ¡É Notes : *1. 100KHz , Duty 10% 2. Distance from end of the package = 2.0mm, time = 5sec max. 6. Electro-optical Characteristics Parameter Forward Voltage Reverse Voltage Capacitance Out power * 1 Radiant Intensity Peak Emission Wavelength Spectral Half Bandwidth Half Angle [TA = 25¡É] Symbol VF VR CT PO IV ¥ ë p ¥ Ä ¥ ë ¥ Ä è Conditions IF = 20§Ì IR = 10 §Ë f = 1MHz IF = 20§Ì IF = 20§Ì IF = 50§Ì IF = 20§Ì Min. Typ. Max. 5 10 1.8 40 18 450 660 20 ±8 2.2 - Unit V V pF mV mcd §¬ §¬ deg. * 1 : measured by our TO-18 package type tester KKC-QM-043-2 1/2 Infrared Emitting Diodes(GaAIAs) KBL-1KL3 ¡ß Typical Characteristics ¡á Power dissipation Vs Ambient temperature ¡á Radiant intensity Vs Forward current P...




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