DatasheetsPDF.com

K9F5616Q0C Datasheet

Part Number K9F5616Q0C
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 512Mb/256Mb 1.8V NAND Flash Errata
Datasheet K9F5616Q0C DatasheetK9F5616Q0C Datasheet (PDF)

K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. P.

  K9F5616Q0C   K9F5616Q0C






Part Number K9F5616Q0C-HIB0
Manufacturers Samsung
Logo Samsung
Description 1.8V NAND Flash Errata
Datasheet K9F5616Q0C DatasheetK9F5616Q0C-HIB0 Datasheet (PDF)

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work we.

  K9F5616Q0C   K9F5616Q0C







Part Number K9F5616Q0C-HCB0
Manufacturers Samsung
Logo Samsung
Description 1.8V NAND Flash Errata
Datasheet K9F5616Q0C DatasheetK9F5616Q0C-HCB0 Datasheet (PDF)

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work we.

  K9F5616Q0C   K9F5616Q0C







Part Number K9F5616Q0C-DIB0
Manufacturers Samsung
Logo Samsung
Description 1.8V NAND Flash Errata
Datasheet K9F5616Q0C DatasheetK9F5616Q0C-DIB0 Datasheet (PDF)

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work we.

  K9F5616Q0C   K9F5616Q0C







Part Number K9F5616Q0C-DCB0
Manufacturers Samsung
Logo Samsung
Description 1.8V NAND Flash Errata
Datasheet K9F5616Q0C DatasheetK9F5616Q0C-DCB0 Datasheet (PDF)

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0 Improvement schedule : The components without this restriction will be available from work we.

  K9F5616Q0C   K9F5616Q0C







512Mb/256Mb 1.8V NAND Flash Errata

K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA The min. Vcc value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F5608U0C-FCB0,FIB0 K9F5608Q0C-HCB0,HIB0 K9F5616U0C-HCB0,HIB0 K9F5616U0C-PCB0,PIB0 K9F5616Q0C-HCB0,HIB0 K9F5608U0C-HCB0,HIB0 K9F5608U0C-PCB0,PIB0 Errata is added.(Front Page)-K9F56XXQ0C tWC tWH tWP tRC tREH tRP tREA tCEA Specification 45 15 25 50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 2.4 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) 2.5 1. The guidence of LOCKPRE pin usage is changed. Don’ t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTOREAD, connect it Vss.(Before) --> Not using LOCK MECHANISM & POWER-ON AUTO-REA.


2005-04-07 : TC35080P    MC846    6N-60    SSI78Q8330    SSI78P7220    SSI78P8060    MP4013    LM204    S2A    S2A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)