FLASH MEMORY
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND ...
Description
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35)
Draft Date
Sep. 19.2001 Nov. 22. 2002
Remark
Advance Preliminary
0.2
The min. Vcc value 1.8V devices is changed. K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 6.2003
Preliminary
0.3
Few current value is changed. Before K9F2GXXQ0M Typ. ISB2 ILI ILO After K9F2GXXQ0M Typ. ISB2 ILI ILO 10 Max. 50 ±10 ±10 20 Max. 100 ±20 ±20
Apr. 2. 2003 Unit : us K9F2GXXU0M Typ. 20 Max. 100 ±20 ±20
Preliminary
K9F2GXXU0M Typ. 10 Max. 50 ±10 ±10 Apr. 9. 2003 Preliminary
0.4
1. The 3rd Byte ID after 90h ID read command is don’ t cared. The 5th Byte ID after 90h ID read command is deleted. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 3. Pb-free Package is added. K9F2G08Q0M-PCB0,PIB0 K9F2G08U0M-PCB0,PIB0 K9F2G16U0M-PCB0,PIB0 K9F2G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.
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