K9F2G08Q0M

K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F2808U0C-FCB0,FIB0 K9F2808Q0C-HCB0,HIB0 K9F2816U0C-HCB0,HIB0 K9F2816U0C-PCB0,PIB0 K9F2816Q0C-HCB0,HIB0 K9F2808U0C-HCB0,HIB0 K9F2808U0C-PCB0,PIB0 Some AC parameter is changed(K9F28XXQ0C). tWC tWH tWP tRC tREH tRP tREA tCEA Before After 45 60 15 20 25 40 50 60 15 20 25 40 30 40 45 55 Mar. 13rd 2003 Draft Date Apr. 15th 2002 Sep. 5th 2002 Remark Advance Advance 2.0 Dec.10th 2002 Preliminary 2.1 Mar. 6th 2003 2.2 2.3 Mar. 26th 2003 2.4 New definition of the number of invalid blocks is added. May. 24th 2003 (Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space) Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The atta...