K9F2808U0M-YIB0

www.DataSheet4U.com K9F2808U0M-YCB0, K9F2808U0M-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2. Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3. Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1. Changed tR Parameter : 7µs(Max.) → 10µ s(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) t care mode during the data-loading and reading 3. Added CE don’ 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128T -> K9F2808U0M-YCB0 - KM29U128IT -> K9F2808U0M-YIB0 1. Changed SE pin description - SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April 10th 1998 July 14th 1998 Remark Preliminary Final 1.1 April 10th 1999 Final 1.2 1.3 June 30th 1999 Sep. 15th 1999 Final Final 1.4 July 17th 2000 Final Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. w...