K9F2808U0A-YCB0

K9F2808U0A-YCB0, K9F2808U0A-YIB0 Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128AIT -> K9F2808U0A-YIB0 1. Changed sequential row read opera tion - The Sequential Read 1 and 2 operation is allowed only within a block 2. Changed invalid block(s) marking method prior to shipping - The invalid block(s) information is written the 1st or 2nd page of the invalid block(s) with 00h data --->The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h data at the column address of 517. 1. Changed endurance : 1million -> 100K program/erase cycles 2. Changed invalid block(s) marking method prior to shipping - The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h data at the column address of 517. --->The invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFh data at the column address of 517. 1. Changed SE pin description - SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April 10th 1999 July 23th 1999 Sep. 15th 1999 Remark Adva...