K80E07NE

TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE „ E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4) Thermal Characteristics Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv/dt Tch Tstg Rating 70 70 ±20 80 58 240 87 16.4 40 8.7 11.5 175 −55~175 Unit V V V A A A W...