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K7A803601M

Samsung semiconductor

256Kx36 & 512Kx18 Synchronous SRAM

K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Bu...


Samsung semiconductor

K7A803601M

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K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.4 1. Changed tCD from 4.0ns to 4.2ns at -85. Changed tOE from 4.0ns to 4.2ns at -85. 2. Changed DC condition at Icc and parameters Icc ; from 375mA to 400mA at -72, from 340mA to 380mA at -85, from 300mA to 350mA at -10, ISB ; from 110mA to 130mA at -72, from 110mA to 130mA at -85, from 100mA to 120mA at -10 0.5 ADD VDDQ Supply voltage( 2.5V ) 0.6 Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. 1.0 Final spec Release. 2.0 1. Remove VDDQ Supply voltage( 2.5V I/O ) 3.0 1. Add VDDQ ...




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